July 17, 2017

Single Event Effect Assessment of a 1-Mbit Commercial MRAM

2017 Nuclear and Space Radiation Effects Conference (NSREC) Radiation Effects Data Workshop

By: Philippe C. Adell, Slaven Moro, Lionel Gouyet, Christian Chatry, Bert Vermeire

Abstract

Single event effect susceptibility of a 1-Mbit commercial MRAM was experimentally evaluated. The memory exhibited SEFIs when operated in a dynamic mode with an LET threshold of 2.29 MeV.cm2/mg and a saturated cross section of 2.2×10-4 cm2/device. The memory was not sensitive to SEL, SEU or MBUs.