Research Area
Year Published

6 Results

October 2, 2017

Proton Test Results for a Commercial Fanout Buffer, a Variable Gain Amplifier, and a ±40V Operational Amplifier

RADiations Effects on Components and Systems (RADECS)

Advanced electronics systems require a wide variety of high-performance analog, mixed signal, and clock distribution microcircuits which aren’t readily available as space-qualified components.

By: Raichelle Aniceto, Randall Milanowski, Slaven Moro, Kerri Cahoy, Garrett Schlenvogt

October 2, 2017

Assessment of Proton Radiation Effects on Hamamatsu InGaAs PIN Photodiodes and Simulated Radiation Responses Using Defect-Based TCAD Modeling

RADiations Effects on Components and Systems (RADECS)

Hamamatsu InGaAs PIN photodiodes were exposed to 105 MeV protons to a fluence of 2.55×1011 p/cm2 . Radiation induced increase in dark current was observed that appeared stable following room temperature annealing. A preliminary TCAD model was developed for use in mixed-mode simulation analyses.

By: Raichelle Aniceto, Randall Milanowski, Slaven Moro, Kerri Cahoy, Garrett Schlenvogt

July 21, 2017

Proton Testing Results for Kaman KD-5100 Differential Inductive Position Measuring Systems

Journal, IEEE Radiation Effects Data Workshop (REDW)

We report proton testing of a position measuring system, the Kaman KD-5100, with applications including mirror positioning for laser beam control. We measure a device response likely due to total ionizing dose and/or displacement damage.

By: Bart McGuyer, Randall Milanowski, Slaven Moro, Norman Hall, Bert Vermeire

July 18, 2018

Total Ionizing Dose Assessment of a Commercial 200V PMOSFET

IEEE Nuclear & Space Radiation Effects Conference (NSREC)

Total ionizing dose testing of commercial 200 V PMOSFETs. At 100 kRad(Si), observed VT increase of ~ 3 V for biased ON devices and increase of ~ 1 V for biased OFF devices. The RDS_ON did not degrade with dose.

By: Raichelle Aniceto, Randall Milanowski, Slaven Moro, Norman Hall, Bert Vermeire, Josh Shields, Kerri Cahoy

July 17, 2017

Single Event Effect and Total Ionizing Dose Assessment of Commercial Optical Coherent DSP ASIC

NSREC 2017

Experimental assessment of commercial 100/200 Gbps optical coherent DSP modem ASIC completed with 64 MeV and 480 MeV proton radiation test campaigns. Single event effect cross sections calculated and no performance degradation observed for proton fluence levels up to 1.27×10^12 p/cm^2 with equivalent total ionizing dose exposure to 170 krad(Si).

By: Raichelle Aniceto, Slaven Moro, Randall Milanowski, Christopher Isabelle, Norman Hall, Bert Vermeire, Kerri Cahoy

July 17, 2017

Single Event Effect Assessment of a 1-Mbit Commercial MRAM

2017 Nuclear and Space Radiation Effects Conference (NSREC) Radiation Effects Data Workshop

Single event effect susceptibility of a 1-Mbit commercial MRAM was experimentally evaluated. The memory exhibited SEFIs when operated in a dynamic mode with an LET threshold of 2.29 MeV.cm2/mg and a saturated cross section of 2.2×10-4 cm2/device. The memory was not sensitive to SEL, SEU or MBUs.

By: Philippe C. Adell, Slaven Moro, Lionel Gouyet, Christian Chatry, Bert Vermeire